Anti-reflective coatings and methods for forming and using same

ABSTRACT

An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of the opening. A method of forming such a layer includes providing a substrate assembly surface and using a gas mixture of at least a silicon containing precursor, a nitrogen containing precursor, and an oxygen containing precursor. The layer is formed at a temperature in the range of about 50° C. to about 600° C. Generally, the anti-reflective coating material layer deposited is Si x O y N z :H, where x is in the range of about 0.39 to about 0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflective coating material layer is in the range of about 10 atomic percent to about 40 atomic percent. The total SiH 4  flow is generally in the range of about 80 sccm to about 400 sccm. The gas mixture may include SiH 4  and N 2 , where the ratio of SiH 4 :N 2 O is in the range of about 0.25 to 0.60. The inorganic anti-reflective coating material layer may be used for defining contact openings, openings for forming capacitor structures, or any other openings in oxide layers.

FIELD OF THE INVENTION

[0001] The present invention relates to the fabrication of integratedcircuits. More particularly, the present invention relates toanti-reflective layers used in defining openings in such fabrication.

BACKGROUND OF THE INVENTION

[0002] One important process in fabrication of integrated circuits (ICs)is photolithography. Generally, photolithography involves reproducing animage from a mask in a layer of photoresist that is supported byunderlying layers of a semiconductor substrate assembly.Photolithography is a very complicated and critical process in thefabrication of ICs. The ability to reproduce precise images in aphotoresist layer is crucial to meeting demands for increasing devicedensity.

[0003] In the photolithographic process, first an optical mask ispositioned between the radiation source and the photoresist layer on theunderlying layers of a semiconductor substrate assembly. A radiationsource can be, for example, visible light or ultraviolet radiation.Then, the image is reproduced by exposing the photoresist to radiationthrough the optical mask. Portions of the mask contain an opaque layer,such as, for example, chromium, that prevents exposure of the underlyingphotoresist. The remaining portions of the mask are transparent,allowing exposure of the underlying photoresist.

[0004] The layers underlying the photoresist layer generally include oneor more individual layers that are to be patterned. That is, when alayer is patterned, material from the layer is selectively removed. Theability to pattern layers and material enables ICs to be fabricated. Inother words, the patterned layers are used as building blocks inindividual devices of the ICs. Depending on the type of photoresist used(e.g., positive type or negative type photoresist), exposed photoresistis either removed when the substrate is contacted with a developersolution, or the exposed photoresist becomes more resistant todissolution in the developer solution. Thus, a patterned photoresistlayer is able to be formed on the underlying layers.

[0005] One of the problems experienced with conventional opticalphotolithography is the difficulty of obtaining uniform exposure of thephotoresist underlying transparent portions of the mask. It is desiredthat the light intensity exposing the photoresist be uniform to obtainoptimum results.

[0006] When sufficiently thick layers of photoresist are used, thephotoresist must be or become partially transparent so that photoresistat the surface of underlying layers is exposed to a substantiallysimilar extent as the photoresist at the outer surface. Often, however,light that penetrates the photoresist is reflected back toward theradiation source from the surface of the underlying layers of thesubstrate assembly. The angle at which the light is reflected is atleast in part dependent upon the topography of the surface of theunderlying layers and the type of material of the underlying layers. Thereflective light density can vary in the photoresist throughout itsdepth or partially through its depth, leading to non-uniform exposureand undesirable exposure of the photoresist. Such exposure of thephotoresist can lead to poorly controlled features (e.g., gates, metallines, etc.) of the ICs.

[0007] In an attempt to suppress reflectivity, or in other words tominimize the variable reflection of light in a photoresist layer,anti-reflective coatings, i.e., anti-reflective layers, have been usedbetween the underlying layers of a substrate assembly and thephotoresist layer or between the photoresist layer and the radiationsource. Such anti-reflective coatings suppress reflectivity from theunderlying substrate assembly allowing exposure across a photoresistlayer to be controlled more easily from the radiation incident on thephotoresist from the radiation source.

[0008] Typically, anti-reflective coatings are organic materials.Organic layers can, however, lead to particle contamination in theintegrated circuit (IC) due to the incomplete removal of organicmaterial from the underlying layers after the photolithography step isperformed. Such particle contamination can potentially be detrimental tothe electrical performance of the IC. Further, the underlying layersupon which the organic materials are formed may be uneven, resulting indifferent thicknesses of the organic material used as theanti-reflective coating, e.g., thicker regions of organic material maybe present at various locations of the underlying layers. As such, whenattempting to remove such organic material, if the etch is stopped whenthe underlying layers are reached, then some organic material may beleft. If the etch is allowed to progress to etch the additionalthickness in such regions or locations, the underlying layers may beundesirably etched (e.g., punch through of an underlying layer mayoccur).

[0009] Further, inorganic anti-reflective layers have also beenintroduced for suppressing reflectivity in the photolithography process.For example, silicon-rich silicon dioxide, silicon-rich nitride, andsilicon-rich oxynitride have been used as inorganic anti-reflectivelayers, for example, in the patterning of metal lines and gates.

[0010] After a patterned photoresist layer is formed on a substrateassembly, many other processes are typically performed in thefabrication of ICs. For example, the photoresist can act as animplantation barrier during an implant step, the photoresist can be usedto define the outer perimeter of an area (e.g., a contact hole) that isetched in one or more underlying layers of the substrate assembly, orthe photoresist may be used in any other typically used fabricationprocess. In many of such cases, the photoresist acts as a barrier duringthe etching process, such that only selective material of the one ormore underlying substrate assembly layers is removed.

[0011] After the processes involving photolithographic techniques arecarried out (e.g., implantation, etching, etc.), in many circumstancesnot only must the photoresist material used in the photolithographicprocess be removed, but the anti-reflective coating must also beremoved. For example, in the formation of a container capacitor, such asthe container capacitor storage cell described in U.S. Pat. No.5,270,241 to Denison et al., entitled “Optimized Container StacksCapacitor DRAM Cell Utilizing Sacrificial Oxide Deposition and ChemicalMechanical Polishing,” issued Dec. 14, 1993, a contact opening isdefined using photolithographic processes in conjunction with the use ofan anti-reflective layer prior to depositing a bottom electrodestructure therein. In many cases, the photoresist and theanti-reflective coating used to define the contact opening needs to beremoved prior to subsequent processing of the structure.

[0012] However, various issues arise during formation of such structuresand other integrated circuit structures because of the need to removethe anti-reflective coating. For example, it is important to carry outthe formation of integrated circuit structure in the least amount ofsteps. When anti-reflective coatings need to be removed prior tosubsequent processing, an additional step, i.e., the step of removingthe anti-reflective coating, is required. For example, the inorganicanti-reflective coatings may be removed in an additional step usingsuitable etching techniques such as dry etching or reactive ion etchingwith the use of a fluorine chemistry, e.g., CHF₃ or CF₄. However, wetetchants are generally more efficient at etching inorganicanti-reflective coating layers than dry etchants. The problem with wetetchants is that such etchants generally etch isotropically and criticaldimensions of layers patterned using the anti-reflective coating cannotgenerally be adequately controlled.

SUMMARY OF THE INVENTION

[0013] There is a need for methods of forming and using inorganicanti-reflective material layers. For example, it is desirable tosuppress reflectivity with the use of anti-reflective material layers inpatterning steps for the formation of integrated circuit structures. Thepresent invention provides various methods for forming inorganicanti-reflective coating material layers and methods for using suchinorganic anti-reflective coating material layers in the formation ofintegrated circuit structures. For example, the present inventionprovides an anti-reflective coating material layer having a relativelyhigh etch rate such that it can be removed simultaneously with thecleaning of a defined opening in a relatively short period of timewithout affecting the critical dimensions of the opening.

[0014] A method of forming an anti-reflective coating material layeraccording to the present invention includes providing a substrateassembly having a surface in a reaction chamber. A gas mixture of atleast a silicon containing precursor, a nitrogen containing precursor,and an oxygen containing precursor is provided in the reaction chamber.An inorganic anti-reflective coating material layer is deposited on thesubstrate assembly surface using the gas mixture at a temperature in therange of about 50° C. to about 400° C. The deposition of the inorganicanti-reflective coating material layer includes subjecting the gasmixture to a glow discharge created by applying an electromagnetic fieldacross the gas mixture. Further, the inorganic anti-reflective coatingmaterial layer deposited is Si_(x)O_(y)N_(x):H, where x is in the rangeof about 0.39 to about 0.65, y is in the range of about 0.02 to about0.56, z is in the range of about 0.05 to about 0.33, and where theatomic percentage of hydrogen in the inorganic anti-reflective coatingmaterial layer is in the range of about 10 atomic percent to about 40atomic percent.

[0015] In one embodiment of the method, the silicon containing precursoris SiH₄. Further, the nitrogen containing precursor and oxygencontaining precursor is N₂O.

[0016] In another embodiment, the provision of the gas mixture includesproviding a total flow of SiH₄ in a range of about 80 sccm to about 400sccm; preferably a total flow of SiH₄ is in the range of about 150 sccmto about 400 sccm. Further, provision of the gas mixture includesproviding a flow of N₂O in a range such that the ratio of the totalflows of SiH₄:N₂O is in a range of about 0.25 to about 0.60.

[0017] In yet another embodiment of the method, the silicon containingprecursor is disilane.

[0018] Another method of forming an anti-reflective coating materiallayer according to the present invention includes providing a substrateassembly having a surface in a reaction chamber. A gas mixture of atleast SiH₄ and N₂O is provided in the reaction chamber. The provision ofthe gas mixture includes providing a total flow of SiH₄ in a range ofabout 150 sccm to about 400 sccm. The inorganic anti-reflective coatingmaterial layer is deposited on the substrate assembly surface in thereaction chamber. The deposition includes subjecting the gas mixture toa glow discharge created by applying an electromagnetic field across thegas mixture.

[0019] In one embodiment of the method, the total flow of SiH₄ is in arange of about 200 sccm to about 400 sccm. In another embodiment of themethod, the temperature of the surface is maintained in the range ofabout 50° C. to about 600° C. In yet another embodiment of the method,the provision of the gas mixture further includes providing a flow ofN₂O in a range such that the ratio of the total flows of SiH₄:N₂O is ina range of about 0.60 to about 0.25.

[0020] An anti-reflective coating material layer according to thepresent invention consists essentially of Si_(x)O_(y)N_(x):H, where x isin the range of about 0.39 to about 0.65, y is in the range of about0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, andwhere the atomic percentage of hydrogen in the inorganic anti-reflectivecoating material layer is in a range of about 10 atomic percent to about40 atomic percent.

[0021] A method for use in fabrication of integrated circuits accordingto the present invention includes providing a substrate assembly havinga surface and providing an oxide layer on the surface of the substrateassembly. Further, an inorganic anti-reflective coating material layeris formed on the oxide layer and a mask layer is provided on theinorganic anti-reflective coating material layer. The mask layer ispatterned to define an opening to be formed in the oxide layer. Theoxide layer is etched to define the opening in the oxide layer to aregion of the surface of the substrate assembly. The opening is definedby at least one wall and the surface region. The mask layer is thenremoved and the at least one wall and the surface region defining theopening is cleaned with a wet etchant while simultaneously completelyremoving the inorganic anti-reflective coating material layer.

[0022] In one embodiment of the method, the oxide layer is BPSG. Yetfurther, cleaning the at least one wall and the surface region includescompletely removing the anti-reflective coating material layer with lessthan about 100 angstroms of BPSG being removed.

[0023] In another embodiment of the method, the wet etchant cleans theat least one wall and the surface region defining the opening in a timeperiod of less than about 60 seconds while simultaneously completelyremoving the inorganic anti-reflective coating material layer.

[0024] Yet further, in another embodiment, the inorganic anti-reflectivecoating material layer has a thickness in the range of about 100 Å toabout 1000 Å.

[0025] A method for use in fabrication of a capacitor structureaccording to the present invention is also provided. The method includesproviding a substrate assembly with the substrate assembly including aconductive contact surface region. An oxide layer is provided on thesubstrate assembly. Further, an opening is defined through the oxidelayer to the conductive contact surface region. The definition of theopening includes forming an inorganic anti-reflective material layer onthe oxide layer, forming a mask layer on the inorganic anti-reflectivematerial layer, patterning the mask layer to define the opening in theoxide layer, and etching the oxide layer to define the opening in theoxide layer to the conductive contact surface region of the substrateassembly with the opening defined by at least one wall and theconductive surface region. The mask layer is then removed and the atleast one wall and the surface region defining the opening cleaned witha wet etchant while simultaneously completely removing the inorganicanti-reflective material layer. Thereafter, a capacitor electrode isformed in the opening after the opening is cleaned and the inorganicanti-reflective coating material layer is completely removed.

[0026] Another method for use in fabrication of integrated circuitsaccording to the present invention includes providing a substrateassembly having an opening defined therein by at least one surface ofBPSG. The opening is defined using an inorganic anti-reflective coatingmaterial layer with at least a portion of the anti-reflective coatingmaterial layer remaining on the substrate after the opening is defined.Thereafter, the inorganic anti-reflective coating material layer iscompletely removed with less than about 100 angstroms of the at leastone surface of BPSG being removed.

[0027] In one embodiment of the method, the inorganic anti-reflectivecoating material layer has a thickness in the range of about 100 Å toabout 1000 Å. Further, completely removing the inorganic anti-reflectivecoating material layer includes cleaning the opening with a wet etchantin a time period of less than about 60 seconds while simultaneouslyremoving the inorganic anti-reflective coating material layer.

[0028] Lastly, a method of forming a contact opening according to thepresent invention includes defining a contact opening in an oxide layerusing an inorganic anti-reflective coating material layer. The contactopening extends to a conductive contact surface area. A portion of theinorganic anti-reflective coating layer remains after the contactopening is defined. Thereafter, the portion of the inorganicanti-reflective coating material layer is completely removed whilecleaning the opening with less than about 100 angstroms of the oxidelayer being removed.

[0029] In one embodiment of the method, the oxide layer is BPSG or richBPSG. Further, the inorganic anti-reflective coating material layer mayhave a thickness in the range of about 100 Å to about 1000 Å and a wetetchant is used to clean the opening in a time period of less than about60 seconds while simultaneously removing the inorganic anti-reflectivecoating material layer.

BRIEF DESCRIPTION OF THE DRAWINGS

[0030] FIGS. 1A-1D generally illustrate the process of patterning andetching an opening in a layer using an inorganic anti-reflectivematerial layer; the anti-reflective material layer is removed during theprocess.

[0031] FIGS. 2A-2D illustrate the formation of a capacitor structureusing an anti-reflective layer in the definition of an opening; theanti-reflective material layer being removed during the process.

[0032] FIGS. 3A-3D generally illustrate a process of forming a contactin an opening defined using an anti-reflective material layer; theanti-reflective material layer being removed during the process.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0033] The present invention shall be generally described with referenceto FIGS. 1A-1D. Thereafter, embodiments and illustrations ofapplications using the present invention shall be described withreference to FIGS. 2A-2D and FIGS. 3A-3D. It will be apparent to oneskilled in the art that scaling in the figures does not representprecise dimensions of the various elements illustrated therein.

[0034] To provide better controlled photolithography when formingintegrated circuit (IC) structures, inorganic anti-reflective coating(ARC) layers (otherwise referred to as dielectric anti-reflectivecoatings (DARC)) are used. Using such inorganic anti-reflective materiallayers results in uniform exposure of photoresist which has been formedon underlying layers of a substrate assembly due to at least in partsuppression of reflectivity from the underlying layers of the substrateassembly. Thus, well-defined patterns are able to be reproduced in thephotoresist. Forming well-defined patterns in the photoresist leads towell-defined patterning of underlying material. As device density isincreasing in integrated circuit structures, such precise definition isbecoming increasingly important.

[0035] It is to be understood that the term substrate assembly, as usedherein, includes a wide variety of semiconductor-based structures,including but not limited to semiconductor substrates and semiconductorsubstrates having one or more layers or regions formed thereon ortherein. Semiconductor substrates can be a single layer of material,such as a silicon wafer, or it is understood to includesilicon-on-sapphire (SOS) technology, silicon-on-insulator (SOI)technology, doped and undoped semiconductors, epitaxial layers ofsilicon supported by a base semiconductor, as well as othersemiconductor substrate structures. When reference is made to asemiconductor substrate assembly in the following description, variousprocess steps may have been used to form regions/junctions in asemiconductor substrate or may have been used to form one or more layersor regions of material relative to the substrate.

[0036] FIGS. 1A-1D generally illustrate a method of defining an opening24 (FIG. 1D) in a layer 14 of a substrate assembly 10 according to thepresent invention. As shown in FIG. 1A, substrate assembly 10 includes asubstrate assembly portion 12 and a layer 14 formed thereon. Forexample, substrate assembly 10 may be a structure in which an opening isdefined for formation of a capacitor. In such a case, for example, thesubstrate assembly portion 12 may include a polysilicon containingregion for connection to a bottom electrode of a storage cell capacitoras described with reference to FIGS. 2A-2D. The layer 14 formed on thesubstrate assembly portion 12 may be an insulative layer such as anoxide layer, e.g., silicon dioxide, borophosphosilicate glass (BPSG),phosphosilicate glass (PSG), etc.

[0037] Further, for example, the substrate assembly portion 12 mayinclude a source and/or drain region to which a contact is being madethrough an insulative layer 14, such as an oxide layer, e.g., silicondioxide, BPSG, PSG, etc. As such, a contact opening to a region ofsubstrate assembly portion 12 would be defined to be used for forming acontact interconnect using a conductive material to the source/drainregion, such as described with reference to FIGS. 3A-3D herein.

[0038] The anti-reflective coating materials described herein and themethods for using such anti-reflective materials may be used for anyapplication requiring photolithographic processing. However, the presentinvention is particularly beneficial for use in defining openings suchas contact holes or vias through an insulating layer to underlyingmaterial, defining trenches, defining openings for formation of cellelectrodes, etc.

[0039] More particularly, the present invention may be beneficial forthe definition of small aspect ratio openings having feature sizes orcritical dimensions below about 1 micron (e.g., such as width of anopening being less than about 1 micron) and aspects ratios greaterthan 1. Such critical dimensions and aspect ratios are applicable tocontact holes, vias, trenches, and other configured openings. Forexample, a trench having an opening width of 1 micron and a depth of 3microns has an aspect ratio of 3.

[0040] A method of defining an opening in an oxide layer is generallyshown in FIGS. 1A-1D. As previously described, with reference to FIG.1A, an oxide layer 14 is formed on substrate assembly portion 12 for usein the formation of one or more integrated circuit structures. Theopening 24 as shown in FIG. 1D is then defined in the oxide layer 14.The oxide layer may be formed of silicon dioxide, BPSG, PSG, or anyother oxide or insulating material as would be known to one skilled inthe art. In preferred embodiments, the oxide layer 14 may be a BPSGlayer, wherein the percentage of boron is in the range of about 3percent to about 5 percent by weight and the percentage of phosphorousis in the range of about 6 percent to about 8 percent by weight, or theoxide layer 14 may be a rich BPSG layer, wherein the percentage of boronis in the range of about 3.8 percent to about 4.2 percent by weight andthe percentage of phosphorous is in the range of about 6.8 percent toabout 7.4 percent by weight.

[0041] An inorganic anti-reflective coating material layer 16 is thenformed over the oxide insulating layer 14 for suppressing reflectivityfrom the substrate assembly 10 during the photolithography process usedto define opening 24. The inorganic anti-reflective coating materiallayer 16 is formed such that the anti-reflective coating material layer16 has a thickness in the range of about 100 angstroms to about 1000angstroms. Preferably, the anti-reflective coating material layer 16 isa high etch rate material layer and can be removed in a time period ofless than 60 seconds, more preferably in a time period less than about45 seconds, using a wet etchant. With use of such an anti-reflectivecoating material layer 16, the anti-reflective coating material layer 16can be removed at the same time as the structure defining opening 24 iscleaned. As such, an additional step is not required to remove theanti-reflective coating material layer 16. Also, preferably, the wetetch used to remove the inorganic anti-reflective coating material layer16 removes the entire inorganic anti-reflective coating material layer16 with less than about 100 angstroms of BPSG being removed fromsidewalls 28 of the opening 24. Methods of forming such a high etch ratematerial layer shall be described in further detail below.

[0042] Further, as shown in FIG. 1A, to define opening 24, a resistlayer, e.g., a negative or positive type photoresist, is formed over theanti-reflective coating material layer 16. The photoresist layer 18 maybe any suitable photoresist usable in general photolithographyprocesses. For example, the photoresist may be a deep ultraviolet (DUV)resist, mid-ultraviolet (MUV) resist, or any other resist used inphotolithography processing.

[0043] As shown in FIG. 1B, the photoresist 18 is patterned usingconventional photolithography. For example, using a suitable mask, DUVresist may be exposed to wavelengths of about 248 nanometers or othertypes of resist may be exposed to wavelengths of about 365 nanometers.Thereafter, the photoresist is contacted with a developer solution andthe photoresist is selectively removed from the substrate assembly 10according to the pattern exposed therein. Opening 20 in the photoresistlayer 18 results from the photolithography process and defines the areaof the substrate assembly to be removed for attaining the desiredstructure. In other words, the opening 20 defines the area of the oxidelayer 14 which is to be etched to define opening 24 therethrough asshown in FIG. 1D.

[0044] One skilled in the art will recognize that any photolithographprocess for patterning the resist and underlying layers may be usedaccording to the present invention. However, depending on the parametersof the photolithography process, the characteristics of theanti-reflective coating material layer 16 will change accordingly. Forexample, the composition of the layer 16 and thickness of the layer 16may vary depending upon whether DUV resist exposed to wavelengths in the248 nanometer region or resist exposed to wavelengths in the 365nanometer region are used. This is at least in part due to the differentreflectivity properties required for the layer 16 in differentphotolithographic processes.

[0045] After the photoresist has been selectively removed to pattern theoxide layer 14, a suitable dry etch is used to etch the opening 24 inthe oxide layer 14 down to surface region 17 of the substrate assemblyportion 12. The dry etch of the opening 24 is performed using differentchemistries for different applications. Preferably, a dry etch is useddue to the ability of dry etchants to etch isotropically and as suchcritical dimensions can be controlled. One example of a chemistry usedfor the removal of an oxide layer, e.g., a rich BPSG layer, wouldinclude the use of a fluorine chemistry, such as CHF₃, SF₆, or CF₄. Thedry etch removes portions of the anti-reflective coating material layer16 patterned by the photoresist layer 18, in addition to the etching ofthe oxide layer 14 to define the opening 24.

[0046] The opening 24 is etched through the oxide layer 14 to surfaceregion 17 of the substrate assembly portion 12. For example, thissurface region 17 may be a polysilicon containing region such as in thecase where a capacitor electrode structure is formed in the opening, thesurface region 17 may be a silicon-containing region such as in theformation of a contact to a source or drain region of a transistor, ormay be any other surface region to which an opening is typically etched.

[0047] After the opening 24 has been etched in the oxide layer 14, thephotoresist layer 18 is removed resulting in the structure as shown inFIG. 1C. The photoresist may be removed using any suitable process, suchas an oxygen ash process, e.g., an oxygen containing plasma.

[0048] Generally, as shown in FIG. 1C, residue material 22 on thestructure defining the opening 24 results from the etching process ofthe opening 24 in the oxide layer 14 and the removal of the patternedphotoresist layer 18. For example, such material 22 may be a polymericresidue, or any other material typically resulting on bottom surfaceregions 17 and/or side wall surfaces 28 of openings defined in suchetching processes. To proceed with subsequent processing (e.g.,formation of a conductive material within the opening, silicidation ofsurface region 17, etc.), the bottom surface region 17 and/or side walls28 defining opening 24 are required to be cleaned. Generally, a wetetchant 25 is used for a relatively short period of time to remove suchmaterial 22. However, overetching to remove such material must beavoided to maintain desired critical dimensions. For example, criticaldimensions in an opening formed of an oxide material, e.g., BPSG, shouldbe maintained. Further, for example, a wet clean solution 25 used toremove such material 22 wherein an opening is formed in an oxidematerial such as BPSG may include HF based solutions such as the super Qsolution (40% by weight NH₄F and 4% by weight H₃PO₄) available from OlinHunt, or the wet clean solution 25 may be a solution sold under thetrade designation QE-2 (40% by weight NH₄F and 1.2-1.3% by weight H₃PO₄)also available from Olin Hunt. Preferably, the components of the HFbased solutions include a fluoride salt and a mineral acid, such as NH₄Fand H₃PO₄. More preferably, the solution is an aqueous solutionincluding 30% to 40% by weight NH₄F and 1% to 5% by weight H₃PO₄. Oneskilled in the art will recognize that the wet etchant used will dependon the material being etched. For example, if the anti-reflectivecoating material layer 16 is to be simultaneously removed with theresidue material 22 while being selective to an underlying layer of amaterial other than an oxide layer, then a different solution may beused.

[0049] In order to reduce the number of processing steps in integratedcircuit structure formation processes, it is desirable to remove theanti-reflective coating material layer 16 simultaneously with theresidue material 22 which needs to be cleaned from the bottom surfaceregion 17 and walls 28 defining opening 24. As described above, theanti-reflective coating material layer 16 is formed in a manner suchthat such simultaneous removal of both the anti-reflective coatingmaterial layer 16 and residue material 22 from such surfaces definingopening 24 can be accomplished. The cleaning of the surfaces, e.g.,walls 28 and 17, using the wet etchant 25 is generally performed in avery short period of time, less than about 60 seconds and preferablyless than about 45 seconds, such that oxide material of layer 14 is notremoved, i.e., overetching is prevented. If the wet etchant 25 is usedfor a longer time period, too much of the oxide layer 14 may be removedfrom the walls 28 or bottom surface region 17 defining the opening 24resulting in a critical dimension for the opening 24 which is largerthan desired. Therefore, it is undesirable to wet etch for a longer timeperiod than about 60 seconds.

[0050] If the patterned anti-reflective coating material layer 16 is tobe removed simultaneously with the cleaning of residue material 22 ofthe opening 24, then the anti-reflective coating material layer 16 mustalso be removed within these time constraints. Therefore, there must bea high selectivity of the wet etchant for etching the anti-reflectivecoating material layer 16 relative to the oxide layer 14, e.g.,rich-BPSG. Preferably, the anti-reflective coating material layer 16 iscompletely removed with less than 100 angstroms of BPSG being removed.To increase the etch rate for the anti-reflective coating material layer16 relative to the oxide layer 14, the anti-reflective coating materiallayer 16 generally has a density that is less than conventionaldensities for conventional anti-reflective coating material layers.

[0051] The reduced density of the anti-reflective coating material layer16 which results in a high etch rate anti-reflective coating material,can be achieved in a number of manners by various processing techniquesas described further below. Generally, the anti-reflective coatingmaterial layer 16 is formed with a thickness in the range of about 100angstroms to about 1000 angstroms. Preferably, the anti-reflectivecoating material is an inorganic material. The preferred inorganicanti-reflective coating materials are preferably formed between thephotoresist layer 18 and the underlying layers of the substrate assembly10 for use in photolithography processes. Suitable anti-reflectivecoating materials include an anti-reflective material having thepreferred chemical formula Si_(x)O_(y)N_(z):H. Preferably, x is in therange of about 0.39 to about 0.65, y is in the range of about 0.02 toabout 0.56, and z is in the range of about 0.05 to about 0.33. Morepreferably, x is in the range of about 0.40 to about 0.65, y is in therange of about 0.25 to about 0.56, and z is in the range of about 0.05to about 0.15. It is believed that the incorporation of hydrogen intothe layer 16 reduces the density of the layer 16. Therefore, to achievea reduced density layer, it is preferred that the atomic percentage ofhydrogen content of the anti-reflective coating material is in the rangeof about 10 atomic percent to about 40 atomic percent. It is believedthat conventional anti-reflective coating materials generally have anatomic percentage of hydrogen of less than about 10 atomic percent.

[0052] Further, suitable anti-reflective coating materials generallyhave an index of refraction (n) in the range of about 1.7 to about 2.7at a wavelength of about 248 nanometers or at a wavelength of about 365nanometers. Further, the absorptive coefficient (k) of suitableanti-reflective coatings material is preferably in the range of about0.01 to about 1.5 at a wavelength of about 248 nanometers or at awavelength of about 365 nanometers. Preferably, the index of refractionis in the range of about 1.7 to about 2.1 for a wavelength of about 248nanometers and in the range of about 1.9 to about 2.5 for a wavelengthof about 365 nanometers. Further, preferably, the absorptive coefficientis in the range of about 0.07 to about 0.90 at a wavelength of about 248and in the range of about 0.01 to about 0.4 for a wavelength of about365. The refractive index and absorptive coefficient required forprocessing depends on the index of refraction and the absorptivecoefficient of the photoresist used and the other underlying layers ofthe substrate assembly upon which the photoresist is formed, as well asthe dimensions of the underlying substrate assembly features and layers.Depending on the wavelength, as the amount of silicon in anon-stoichiometric anti-reflective coating material increases, the indexof refraction and the absorptive coefficient of the anti-reflectivecoating material typically increases as well. For example, this isgenerally the case for a wavelength of about 365 nanometers relative to248 nanometers.

[0053] The anti-reflective coating material layer 16 is formed onsubstrate assembly 10 according to the present invention using chemicalvapor deposition (CVD). Preferably, plasma-enhanced chemical vapordeposition (PECVD) is used. PECVD allows formation of the layer 16 atrelatively low temperatures in the range of about 50° C. to about 400°C. PECVD processes are used such that lower temperatures can beaccomplished because lower temperatures provide a reduced density forthe anti-reflective coating material layer as shall be described furtherbelow. By controlling the parameters of the PECVD process,anti-reflective coating material of the desired stoichiometry can beformed on the substrate assembly 10. The anti-reflective coatingmaterial layer 16, having a thickness of between 100 angstroms to 1000angstroms, must be capable of being removed in less than 60 seconds,preferably less than 45 seconds. Therefore, the processing parametersand techniques for solving the problem of forming such a reduced densityanti-reflective coating material layer are of particular importance.

[0054] The steps according to the present invention usingplasma-enhanced chemical vapor deposition are carried out in a PECVDreactor, such as a reactor chamber available from Genus, Inc., AppliedMaterials, Inc., or Novelus, Inc. However, any reaction chamber suitablefor performing PECVD may be used.

[0055] In PECVD processes, the reacting gases are introduced into thereaction chamber which is at a relatively low pressure (i.e., lowcompared to ambient pressure). The reaction chamber is evacuated, suchas by vacuum pumps, to remove undesirable reactive species. Then areactant gas mixture including the reacting gases are admitted into thechamber. This is accomplished by one of various techniques. For example,the introduction into the chamber may be accomplished with the use ofcompounds which are gases at room temperature. It should be readilyapparent that the techniques used for introduction of the compounds intothe chamber may be varied and that the present invention is not limitedto any particular technique or reaction chamber. Typically, the reactinggases are admitted into the chamber at separate inlet ports. In additionto the reactive species, a dilution gas may be flowed into the chamber.For example, helium may be flowed into the chamber at a varied flow rateso as to assist in providing uniformity to the layer being formed. InPECVD, a plasma is created by applying an electric field across thereacting gas mixture containing the reacting gases. The plasma addsenergy to the reaction to draw the reaction to completion. Generally,use of a plasma process allows the substrate assembly to be kept at asomewhat lower temperature than other CVD processes. Any suitable powersource may be used to generate the plasma in the reaction chamber.Suitable power sources include an RF generator, a microwave (e.g., 2.5gigahertz microwave source) generator, or an electron cyclotronresonance (ECR) source. The preferred power source is an RF generatoroperating as a standard 13.56 MHz source.

[0056] The anti-reflective coating material layer 16, i.e., the layer ofSi_(x)O_(y)N_(z):H, is formed by flowing a silicon-containing precursorgas, an oxygen-containing precursor gas, and a nitrogen-containingprecursor gas into the reaction chamber. Generally, an inert dilutiongas (e.g., helium or argon) is used as well. Preferably, thesilicon-containing precursor gas may be any member of the silane family(e.g., silane, disilane, dichlorosilane, methelsilane, etc.).Preferably, the oxygen-containing precursor gas and thenitrogen-containing precursor gas are a single gas selected from thegroup of nitrous oxide (N₂O), NO, N₂O₂, and NO₂ or a combinationthereof; preferably the gas is N₂O. However, the nitrogen-containingprecursor and oxygen-containing precursor may be provided as separategases. When such precursors are separate gases, the oxygen-containingprecursor may be selected from O₂, O₃, N₂O, NO, N₂O₂, and NO₂, or acombination thereof. The nitrogen-containing precursor may be selectedfrom N₂O, NO, N₂O₂, NO₂, ammonia (NH₃), nitrogen (N₂), or a gas from thefamily of [C_(n)H_(2n+1)]₂NH, (e.g., [CH₃]₂NH), or a combinationthereof.

[0057] Preferably, the silicon-containing precursor gas is silane (SiH₄)and the single oxygen and nitrogen-containing precursor gas is nitrousoxide (N₂O). Preferably, to obtain the high wet etch rateanti-reflective coating material layer 16 using silane and nitrous oxide(and in addition, preferably He), the temperature of the PECVD processis reduced to the range of about 50° C. to about 400° C. Generally,lower temperatures are preferred. With lower temperatures in the lowerportions of the range described above, higher etch rate anti-reflectivecoating layers 16 can be created. It is believed that with the use ofsuch lower temperatures, the high etch rate layers incorporate a higherhydrogen content in the film, thus allowing for faster etching.Preferably, the temperature for the process is in the range of about 50°C. to about 400° C. More preferably, the temperature is in the range of200° C. to 400° C.; however, because of temperatures required for otherprocess steps, a temperature of about 400° C. is typically used. Asdescribed further below, higher temperatures, i.e., greater than 400°C., can be used when higher total flow rates of silane are used to formthe higher etch rate anti-reflective coating layers.

[0058] To obtain desired anti-reflective coating material reflectiveproperties, a fixed flow ratio of silane to nitrous oxide(silane:nitrous oxide) is required. Preferably, this fixed flow ratio ofthe total silane flow to total nitrous oxide flow (silane:nitrous oxide)is in the range of about 0.60 to about 0.25. Preferably, the pressure ofthe PECVD process is about 3.5 torr to about 6.5 torr. Further,preferably, the reacting gas mixture is subjected to a glow discharge ora plasma created by applying a radiofrequency electromagnetic field of13.56 MHz at a power density of about 50 watts/cm² to about 500watts/cm² across the reacting gas mixture. Preferably, the power densityis in the range of about 80 watts/cm² to about 140 watts/cm² across thereacting gas mixture.

[0059] Preferably, the total flow of silane is in the range of about 80sccm to about 400 sccm. The wet etch rate for the anti-reflectivecoating material layer 16 may be increased by increasing the totalsilane flow into the reaction chamber. Therefore, more preferably, theupper portion of the range of total silane flow greater than 150 sccm ispreferred. At total flow rates for silane greater than 150 sccm,temperatures greater than 400° may be use to form the high etch rateanti-reflective coating material layers. More preferably, the range ofabout 200 sccm to about 350 sccm is used to reduce density of the layer16. However, it must be remembered that a fixed ratio of flows of silaneto nitrous oxide is required to get the desired anti-reflective coatingmaterial reflection properties. Therefore, with an increase in totalsilane flow, an increase in nitrous oxide flow must be effected. Forexample, if 80 sccm of silane in conjunction with a 140 sccm of nitrousoxide provides desired anti-reflective coating material properties, thenif the total silane flow is increased to 120 sccm, the flow of nitrousoxide must be increased to 210 sccm.

[0060] As described above, it should be clear that in formation of highetch rate anti-reflective coating material layers according to thepresent invention, temperature and total flow rate of silane arecontrolled. For example, at lower temperatures, e.g., less than about400° C., lower flow rates of silane can be used to obtain desiredanti-reflective coating material layers, e.g., flow rates as low as 80sccm. Further, for example, at higher temperatures, e.g., greater thanabout 400° C., higher flow rates of silane, e.g., greater than 150 sccm,are used to obtain desired anti-reflective coating material layers.

[0061] Preferably, the deposition rate for the anti-reflective coatingmaterial layer 16 increases with the increase in total flow of silaneand nitrous oxide leading to a reduced density layer 16. However, anincrease in total flow of silane and nitrous oxide to obtain a high etchrate anti-reflective coating material layer must be weighed againsthaving too high of a deposition rate. Deposition rates above certainlevels decrease uniformity and process stability. Further, in addition,such deposition rates require the use of higher flows which use anundesirably large amount of flow gases. Preferably, the total flow ofsilane and nitrous oxide is used such that the deposition rate for theanti-reflective coating material layer 16 is in the range of 30angstroms per second to about 110 angstroms per second. In addition,reduced power can also be used to reduce deposition rates.

[0062] If a higher level of nitrogen is desired in the anti-reflectivecoating material layer 16, in order to increase the wet etchselectivity, then an additional optional nitrogen-containing precursorgas may be used in the PECVD process. For example, such additionalnitrogen-containing precursor gases may be selected from NH₃, N₂, or agas from the family of [C_(n)H_(2n+1)]₂NH. The flow of such anitrogen-containing precursor is preferably in the range of about 60sccm to about 500 sccm. Further, a dilution gas such as helium, argon,or any other inert gas may be used to help promote uniformity of theanti-reflective coating material layer 16. For example, the flow of sucha dilution gas is preferably in the range of about 1500 sccm to about2500 sccm.

[0063] As an alternative to using silane as the silicon-containingprecursor, disilane may be used. With the use of a flow of disilane asopposed to silane, because of the higher hydrogen content of disilane,more hydrogen may be incorporated into the anti-reflective coatingmaterial layer 16. As a higher hydrogen content generally results in ahigher wet etch rate layer, i.e., a reduced density, disilane mayprovide additional benefit over the use of silane.

[0064] In one particular PECVD process for forming an anti-reflectivecoating material layer 16 according to the present invention, theprocess parameters fall within the following approximate ranges: Plasmapower: 50 watts/cm² to 300 watts/cm² Temperature: 50° C. to 600° C.Total silane flow: 150 sccm to 400 sccm Flow Ratio of silane:nitrousoxide: 0.60 to 0.25 Pressure: 3.5 torr to 6.5 torr Helium flow:(Optional): 1500 sccm to 2500 sccm Additional nitrogen precursor flow:60 sccm to 500 sccm

[0065] The above processing conditions produce an unexpectedly high wetetch rate anti-reflective coating material layer 16. The anti-reflectivecoating material layer 16 formed under such parameters is easily etchedwithin the time constraints less than 60 seconds for cleaning an etchedopening 24 with a wet etchant, wherein the wet etchant may be the SuperQ wet etchant or the QEII wet etchant. This is particularly true whenthe opening 24 is etched in a layer 14 of rich-BPSG (i.e., boron contentin the range of about 3.8 percent to about 4.2 percent by weight, andphosphorous content in the range of about 6.8 percent to about 7.4percent by weight).

[0066] Two illustrations of using the above described anti-reflectivecoating material layer 16 described in detail above are described belowwith reference to FIGS. 2A-2D and FIGS. 3A-3D. In each case, theanti-reflective coating material layer is removed simultaneously withthe cleaning of an opening defined using the layer. The use of theanti-reflective coating material layer according to the presentinvention is described with reference to FIGS. 2A-2D wherein a highdielectric capacitor structure of a storage cell is formed. Further, theanti-reflective coating material layer according to the presentinvention is described with reference to FIGS. 3A-3D wherein a contactstructure is described. For simplicity purposes, the descriptions hereinare limited to the use of the anti-reflective coating material layer inthese two illustrative structures. There are other semiconductorprocesses and structures for various devices, e.g., CMOS devices, memorydevices, etc., that would benefit from the present invention and in nomanner is the present invention limited to the illustrative embodimentsdescribed herein, e.g., a contact structure and a capacitor structure.For example, the present invention may be used with any fabricationprocess wherein an anti-reflective coating material layer is to beremoved in a predetermined amount of time, preferably in processes whichrequire that such an anti-reflective coating material layer be removedin a time less than about 60 seconds.

[0067] As shown in FIG. 2A, a device structure 100 is fabricatedaccording to the present invention. As such, an opening 184 is definedusing an anti-reflective coating material layer 189 according to thepresent invention. Such processing is performed prior to depositing abottom electrode structure 187 on the surfaces defining the opening 184.As shown, and as further described in U.S. Pat. No. 5,392,189 to Fazanet al., the device structure 100 includes field oxide regions 105 andactive regions, i.e., those regions of the substrate 107 not covered byfield oxide. A word line 121 and a field effect transistor (FET) 122 isformed relative to field oxide regions 105 in the active regions.Suitable source/drain regions 125, 130 are created in silicon substrate107. An insulative conformal layer of oxide material 140 is formed overregions of FET 122 and word line 121. A polysilicon plug 165 is formedto provide electrical communication between the substrate 107 and astorage cell capacitor to be formed thereover. Various barrier layersmay be formed over the polysilicon plug 165, including layers 167 and175. For example, such layers may be titanium nitride, tungsten nitride,or any other metal nitride which act as a barrier or other conductivelayers. Thereafter, another insulative layer 183 is formed and theopening 184 is defined therein using the anti-reflective coatingmaterial layer 189 according to the present invention as describedelsewhere herein. Prior to forming a storage cell capacitor in theopening 184, the bottom surface 185 and one or more side walls 186defining opening 184 are cleaned of residue material 181 using a wetetchant such as one previously described herein. Simultaneously with thecleaning of the opening 184, the anti-reflective coating material layer189 is removed without affecting the critical dimensions of the opening184. For example, the insulative layer 183 may be a rich-BPSG layer andthe anti-reflective coating material layer 189 may be formed inaccordance with the PECVD process conditions given using silane andnitrous oxide as the gas precursors. The resultant structure aftercleaning the residue material 181 from the opening 184 along with theremoval of the anti-reflective coating material layer 189 is shown inFIG. 2B.

[0068] Thereafter, as shown in FIG. 2C, a bottom electrode material 109is provided over the structure shown in FIG. 2B. The bottom electrodematerial layer 109 is then planarized resulting in the bottom electrodestructure 187 shown in FIG. 2D. Thereafter, also as shown in FIG. 2D, adielectric layer 191 is then formed relative to the bottom electrodestructure 187. For example, the dielectric layer may be any suitablematerial having a suitable dielectric constant such asBa_(x)Sr_((1−x))TiO₃[BST], BaTiO₃, SrTiO₃, PbTiO₃, Pb(Zr,Ti)O₃[PZT],(Pb,La)(Zr,Ti)O₃[PLZT], (Pb,La)TiO₃[PLT], KNO₃, and LiNbO₃. Further,thereafter, a top electrode 192 is formed relative to the dielectricmaterial 191. The second electrode or top electrode 192 may be formed ofany particular material, such as tungsten nitride, titanium nitride, orany other suitable conductive material.

[0069] It will be recognized by one skilled in the art that anycapacitor formed in an opening which is defined using an anti-reflectivecoating material layer that is required to be removed may benefit fromuse of the present invention. For example, such a container capacitorstorage cell is described in U.S. Pat. No. 5,270,241 to Denison et al.,entitled “Optimized Container Stacked Capacitor DRAM Cell UtilizingSacrificial Oxide Deposition and Chemical Mechanical Polishing,” issuedDec. 14, 1993.

[0070] As shown in FIG. 3A, device structure 200 is fabricated accordingto the present invention. The definition of contact opening 259 prior tometalization of the exposed contact area 255 of substrate 207 isperformed using an anti-reflective coating material layer 263 accordingto the present invention. The device structure 200 includes field oxideregions 205 and active areas (i.e., those regions of substrate 207 notcovered by field oxide). Formed relative to field oxide regions 205 andthe active areas are word line 221 and field effect transistor 222.Suitably doped source/drain regions 225, 230 are formed as known to oneskilled in the art. A conformal layer of oxide material 240, e.g., richBPSG, is formed thereover and contact opening 259 is defined therein tothe exposed contact area 255 in doped region 230 of silicon substrate207 using the anti-reflective coating material layer 263 and an alreadyremoved photoresist.

[0071] The structure shown in FIG. 3A is the resultant structure afteretching of contact opening 259 using the anti-reflective coatingmaterial layer 263. Residue material 231 on the bottom surface 260 andwalls 261 is required to be cleaned prior to subsequent processing. Suchresidue material 231 and the anti-reflective coating material layer 263are simultaneously removed using a wet etchant such as one of the wetetchants previously described herein. The structure resulting from thecleaning of opening 259 and the simultaneous removal of anti-reflectivecoating material layer 263 is shown in FIG. 3B. Thereafter, one or moremetalization or conductive layers are formed in the contact opening 259for providing electrical connection to the substrate region 230. Forexample, various materials may be formed in the contact opening 259,such as titanium nitride or other diffusion barrier materials. Forexample, a barrier layer such as a tungsten nitride layer 275 may bedeposited on the structure of FIG. 3B as shown in FIG. 3C. Thereafter,the tungsten nitride layer 275 may be planarized and a conductivematerial 276 may be formed in the contact opening for providingconnection to doped region 230 of substrate 207 as shown in FIG. 3D.

[0072] All patents and references cited herein are incorporated in theirentirety as if each were incorporated separately. This invention hasbeen described with reference to illustrative embodiments and is notmeant to be construed in a limiting sense. As described previously, oneskilled in the art will recognize that various other illustrativeapplications may utilize the anti-reflective coating material layer asdescribed herein such that removal of the anti-reflective coatingmaterial layer may be accomplished simultaneously with the cleaning ofthe structure of an integrated circuit according to the presentinvention. Various modifications of the illustrative embodiments, aswell as additional embodiments of the invention, will be apparent topersons skilled in the art upon reference to this description.

What is claimed is:
 1. A method of forming an anti-reflective coatingmaterial layer in the fabrication of integrated circuits, the methodcomprising: providing a substrate assembly having a surface in areaction chamber; providing a gas mixture of at least a siliconcontaining precursor, a nitrogen containing precursor, and an oxygencontaining precursor in the reaction chamber; and depositing aninorganic anti-reflective coating material layer on the substrateassembly surface using the gas mixture in the reaction chamber at atemperature in the range of about 50° C. to about 400° C., whereindepositing the inorganic anti-reflective coating material layer includessubjecting the gas mixture to a glow discharge created by applying anelectromagnetic field across the gas mixture, and further wherein theinorganic anti-reflective coating material layer is Si_(x)O_(y)N_(z):H,where x is in the range of about 0.39 to about 0.65, y is in the rangeof about 0.02 to about 0.56, z is in the range of about 0.05 to about0.33, and where the atomic percentage of hydrogen in the inorganicanti-reflective coating material layer is in the range of about 10atomic percent to about 40 atomic percent.
 2. The method according toclaim 1, wherein the silicon containing precursor is SiH₄, and furtherwherein the nitrogen containing precursor and oxygen containingprecursor is N₂O.
 3. The method according to claim 2, wherein providingthe gas mixture includes providing a total flow of SiH₄ in a range ofabout 80 sccm to about 400 sccm.
 4. The method according to claim 3,wherein providing the gas mixture includes providing a total flow ofSiH₄ in a range of about 150 sccm to about 400 sccm.
 5. The methodaccording to claim 3, wherein providing the gas mixture includesproviding a flow of N₂O in a range such that the ratio of the totalflows of SiH₄:N₂O is in a range of about 0.25 to about 0.60.
 6. Themethod of claim 5, wherein depositing the inorganic anti-reflectivecoating material layer includes depositing the inorganic anti-reflectivecoating material layer at a deposition pressure in a range of about 3.5torr to about 6.5 torr, and further wherein the glow discharge iscreated by applying a radio frequency electromagnetic field of 13.56megahertz at a power density of about 50 W/cm² to about to about 500W/cm².
 7. The method of claim 2, wherein providing the gas mixturefurther includes providing an additional nitrogen containing precursor.8. The method of claim 2, wherein providing the gas mixture furtherincludes providing an inert dilution gas in the reaction chamber.
 9. Themethod of claim 1, wherein the temperature is in the range of about 200°C. to about 400° C.
 10. The method of claim 1, wherein the step ofdepositing an anti-reflective coating material layer comprisesdepositing an anti-reflective coating material layer having an index ofrefraction in a range of about 1.7 to about 2.7 and an absorptivecoefficient in a range of about 0.01 to about 1.5 at a wavelength of 248nanometers or 365 nanometers.
 11. The method of claim 1, wherein thesilicon containing precursor is disilane.
 12. A method of forming ananti-reflective coating material layer in the fabrication of integratedcircuits, the method comprising: providing a substrate assembly having asurface in a reaction chamber; providing a gas mixture of at least SiH₄and N₂O in the reaction chamber, wherein providing the gas mixtureincludes providing a total flow of SiH₄ in a range of about 150 sccm toabout 400 sccm; and depositing the inorganic anti-reflective coatingmaterial layer on the substrate assembly surface in the reactionchamber, wherein the deposition includes subjecting the gas mixture to aglow discharge created by applying an electromagnetic field across thegas mixture.
 13. The method of claim 12, wherein the total flow of SiH₄is in the range of about 200 sccm to about 350 sccm.
 14. The method ofclaim 12, wherein the temperature of the surface is maintained in therange of about 50° C. to about 600° C.
 15. The method of claim 12,wherein providing the gas mixture further includes providing a flow ofN₂O in a range such that the ratio of the total flows of SiH₄:N₂O is ina range of about 0.60 to about 0.25.
 16. The method of claim 12, whereindepositing the inorganic anti-reflective layer includes depositing theinorganic anti-reflective layer at a deposition pressure in a range ofabout 3.5 torr to about 6.5 torr, and further wherein the glow dischargeis created by applying a radio frequency electromagnetic field of 13.56megahertz at a power density of about 50 W/cm² to about to about 500W/cm².
 17. The method of claim 12, wherein depositing the inorganicanti-reflective coating material layer comprises depositing ananti-reflective coating material layer having an index of refraction ina range of about 1.7 to about 2.7 and an absorptive coefficient in arange of about 0.01 to about 1.5 at a wavelength of 248 nanometers or365 nanometers.
 18. The method of claim 12, wherein the inorganicanti-reflective coating material layer is Si_(x)O_(y)N_(z):H, where x isin the range of about 0.39 to about 0.65, y is in the range of about0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, andwhere the atomic percentage of hydrogen in the inorganic anti-reflectivecoating material layer is in a range of about 10 atomic percent to about40 atomic percent.
 19. The method of claim 12, wherein providing the gasmixture further includes providing an additional nitrogen containingprecursor in the reaction chamber.
 20. The method of claim 12, whereinproviding the gas mixture further includes providing an inert dilutiongas in the reaction chamber.
 21. An anti-reflective coating materiallayer consisting essentially of Si_(x)O_(y)N_(z):H, where x is in therange of about 0.39 to about 0.65, y is in the range of about 0.02 toabout 0.56, z is in the range of about 0.05 to about 0.33, and where theatomic percentage of hydrogen in the inorganic anti-reflective coatingmaterial layer is in a range of about 10 atomic percent to about 40atomic percent.
 22. The anti-reflective coating material layer of claim21, where x is in the range of about 0.40 to about 0.65, y is in therange of about 0.25 to about 0.56, z is in the range of about 0.05 toabout 0.15, and where the atomic percentage of hydrogen in the inorganicanti-reflective coating material layer is in the range of about 10atomic percent to about 40 atomic percent.
 23. A method for use infabrication of integrated circuits, the method comprising: providing asubstrate assembly having a surface; providing an oxide layer on thesurface of the substrate assembly; forming an inorganic anti-reflectivecoating material layer on the oxide layer; providing a mask layer on theinorganic anti-reflective coating material layer; patterning the masklayer to define an opening to be formed in the oxide layer; etching theoxide layer to define the opening in the oxide layer to a region of thesurface of the substrate assembly, the opening defined by at least onewall and the surface region; removing the mask layer; and cleaning theat least one wall and the surface region defining the opening with a wetetchant while simultaneously completely removing the inorganicanti-reflective coating material layer.
 24. The method of claim 23,wherein the oxide layer is BPSG and cleaning the at least one wall andthe surface region includes completely removing the anti-reflectivecoating material layer with less than about 100 angstroms of BPSG beingremoved.
 25. The method of claim 23, wherein the surface region of thesemiconductor substrate assembly is a silicon containing contact surfacearea.
 26. The method of claim 23, wherein the wet etchant cleans the atleast one wall and the surface region defining the opening in a timeperiod of less than about 60 seconds while simultaneously completelyremoving the inorganic anti-reflective coating material layer.
 27. Themethod of claim 26, wherein the inorganic anti-reflective coatingmaterial layer has a thickness in the range of about 100 Å to about 1000Å.
 28. The method of claim 26, wherein the wet etchant is an HF basedsolution.
 29. The method of claim 28, wherein the wet etchant comprisesNH₄F and H₃PO₄.
 30. The method of claim 23, wherein forming theinorganic anti-reflective coating material layer includes: providing areaction chamber, the substrate assembly located therein; providing agas mixture of at least SiH₄ and N₂O in the reaction chamber, whereinproviding the gas mixture includes providing a total flow of SiH₄ in arange of about 150 sccm to about 400 sccm, and further wherein providingthe gas mixture includes providing a flow of N₂O in a range such thatthe ratio of the total flows of SiH₄:N₂O is in the range of about 0.60to about 0.25; and depositing the inorganic anti-reflective coatingmaterial layer on the substrate assembly surface by chemical vapordeposition in the reaction chamber, wherein the deposition includessubjecting the gas mixture to a glow discharge created by applying anelectromagnetic field across the gas mixture.
 31. The method of claim23, wherein the inorganic anti-reflective coating material layer isSi_(x)O_(y)N_(z):H, where x is in the range of about 0.39 to about 0.65,y is in the range of about 0.02 to about 0.56, z is in the range ofabout 0.05 to about 0.33, and where the atomic percentage of hydrogen inthe inorganic anti-reflective coating material layer is in the range ofabout 10 atomic percent to about 40 atomic percent.
 32. A method for usein fabrication of a capacitor structure, the method comprising:providing a substrate assembly, the substrate assembly including aconductive contact surface region; providing an oxide layer on thesubstrate assembly; defining an opening through the oxide layer to theconductive contact surface region, wherein defining the openingcomprises: forming an inorganic anti-reflective material layer on theoxide layer, forming a mask layer on the inorganic anti-reflectivematerial layer, patterning the mask layer to define the opening in theoxide layer, etching the oxide layer to define the opening in the oxidelayer to the conductive contact surface region of the substrateassembly, the opening defined by at least one wall and the conductivesurface region, removing the mask layer, and cleaning the at least onewall and the surface region defining the opening with a wet etchantwhile simultaneously completely removing the inorganic anti-reflectivematerial layer; and forming a capacitor electrode in the opening afterthe opening is cleaned and the inorganic anti-reflective coatingmaterial layer is completely removed.
 33. The method of claim 32,wherein the oxide layer is BPSG.
 34. The method of claim 33, wherein theoxide layer is rich BPSG.
 35. The method of claim 33, wherein cleaningthe at least one wall and the surface region includes completelyremoving the anti-reflective coating material layer with less than about100 angstroms of BPSG being removed.
 36. The method of claim 35, whereinthe inorganic anti-reflective material layer has a thickness in therange of about 100 Å to about 1000 Å.
 37. The method of claim 36,wherein the wet etchant cleans the at least one wall and the surfaceregion defining the opening in a time period of less than about 60seconds while simultaneously completely removing the inorganicanti-reflective coating material layer.
 38. The method of claim 37,wherein the wet etchant is an HF based solution.
 39. The method of claim32, wherein the inorganic anti-reflective coating material layer isSi_(x)O_(y)N_(z):H, where x is in the range of about 0.39 to about 0.65,y is in the range of about 0.02 to about 0.56, z is in the range ofabout 0.05 to about 0.33, and where the atomic percentage of hydrogen inthe inorganic anti-reflective coating material layer is in the range ofabout 10 atomic percent to about 40 atomic percent.
 40. The method ofclaim 39, wherein the inorganic anti-reflective material layer has athickness in the range of about 100 Å to about 1000 Å.
 41. The method ofclaim 40, wherein the wet etchant cleans the at least one wall and thesurface region defining the opening in a time period of less than about60 seconds while simultaneously removing the inorganic anti-reflectivecoating material layer.
 42. The method of claim 32, wherein forming theinorganic anti-reflective coating material layer includes: providing areaction chamber, the substrate assembly located therein; providing agas mixture of at least SiH₄ and N₂O in the reaction chamber, whereinproviding the gas mixture includes providing a total flow of SiH₄ in arange of about 150 sccm to about 400 sccm, and further wherein providingthe gas mixture includes providing a flow of N₂O in a range such thatthe ratio of the total flows of SiH₄:N₂O is in the range of about 0.25to about 0.60; and depositing the inorganic anti-reflective coatingmaterial layer on the substrate surface by chemical vapor deposition inthe reaction chamber, wherein the deposition includes subjecting the gasmixture to a glow discharge created by applying an electromagnetic fieldacross the gas mixture.
 43. A method for use in fabrication ofintegrated circuits, the method comprising: providing a substrateassembly having an opening defined therein by at least one surface ofBPSG, wherein the opening is defined using an inorganic anti-reflectivecoating material layer with at least a portion of the anti-reflectivecoating material layer remaining on the substrate assembly after theopening is defined; and completely removing the inorganicanti-reflective coating material layer with less than about 100angstroms of the at least one surface of BPSG being removed duringcleaning of the opening.
 44. The method of claim 43, wherein theinorganic anti-reflective coating material layer has a thickness in therange of about 100 Å to about 1000 Å.
 45. The method of claim 44,wherein completely removing the inorganic anti-reflective coatingmaterial layer includes cleaning the opening with a wet etchant in atime period of less than about 60 seconds while simultaneously removingthe inorganic anti-reflective coating material layer.
 46. The method ofclaim 45, wherein the wet etchant is an HF based solution.
 47. Themethod of claim 46, wherein the wet etchant comprises NH₄F and H₃PO₄.48. The method of claim 43, wherein the opening is further defined by asilicon containing contact area.
 49. The method of claim 43, wherein theinorganic anti-reflective coating material layer is Si_(x)O_(y)N_(z):H,where x is in the range of about 0.39 to about 0.65, y is in the rangeof about 0.02 to about 0.56, z is in the range of about 0.05 to about0.33, and where the atomic percentage of hydrogen in the inorganicanti-reflective coating material layer is in the range of about 10atomic percent to about 40 atomic percent.
 50. A method of forming acontact opening in fabrication of integrated circuits, the methodcomprising: defining a contact opening in an oxide layer using aninorganic anti-reflective coating material layer, wherein the contactopening extends to a conductive contact surface area, and furtherwherein a portion of the inorganic anti-reflective coating layer remainsafter the contact opening is defined; and completely removing theportion of the inorganic anti-reflective coating material layer whilecleaning the opening with less than about 100 angstroms of the oxidelayer being removed.
 51. The method of claim 50, wherein the oxide layeris BPSG.
 52. The method of claim 51, wherein the oxide layer is richBPSG.
 53. The method of claim 51, wherein the inorganic anti-reflectivecoating material layer has a thickness in the range of about 100 Å toabout 1000 Å.
 54. The method of claim 53, wherein completely removingthe portion of the inorganic anti-reflective coating material layerincludes using a wet etchant to clean the opening in a time period ofless than about 60 seconds while simultaneously removing the inorganicanti-reflective coating material layer.
 55. The method of claim 54,wherein the wet etchant is an HF based solution.
 56. The method of claim50, wherein the inorganic anti-reflective coating material layer isSi_(x)O_(y)N_(z):H, where x is in the range of about 0.39 to about 0.65,y is in the range of about 0.02 to about 0.56, z is in the range ofabout 0.05 to about 0.33, and where the atomic percentage of hydrogen inthe inorganic anti-reflective coating material layer is in the range ofabout 10 atomic percent to about 40 atomic percent.
 57. The method ofclaim 56, wherein the inorganic anti-reflective material layer has athickness in the range of about 100 Å to about 1000 Å.
 58. The method ofclaim 57, wherein completely removing the portion of the inorganicanti-reflective coating material layer includes cleaning the opening ina time period of less than about 60 seconds while simultaneouslyremoving the inorganic anti-reflective coating material layer.
 59. Themethod of claim 58, wherein forming the inorganic anti-reflectivecoating material layer includes: providing a reaction chamber, thesubstrate assembly located therein; providing a gas mixture of at leastSiH₄ and N₂O in the reaction chamber, wherein providing the gas mixtureincludes providing a total flow of SiH₄ in a range of about 150 sccm toabout 400 sccm, and further wherein providing the gas mixture includesproviding a flow of N₂O in a range such that the ratio of the totalflows of SiH₄:N₂O is in the range of about 0.25 to about 0.60; anddepositing the inorganic anti-reflective coating material layer on thesubstrate surface in the reaction chamber, wherein the depositionincludes subjecting the gas mixture to a glow discharge created byapplying an electromagnetic field across the gas mixture.
 60. The methodof claim 59, wherein the deposition includes depositing theanti-reflective coating material layer at a temperature in a range ofabout 50° C. to about 600° C. and at a deposition pressure in a range ofabout 3.5 torr to about 6.5 torr, and further wherein the glow dischargeis created by applying a radio frequency electromagnetic field of 13.56megahertz at a power density of about 50 W/cm² to about to about 500W/cm².